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The Effect of Depos...
The Effect of Deposition Conditions on Heterointerface-Driven Band Alignment and Resistive Switching Properties
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- Yong, Zhihua (author)
- Singapore University of Technology and Design
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- Mamidala, Saketh, Ram (author)
- Lund University,Lunds universitet,Nanoelektronik,Forskargrupper vid Lunds universitet,LTH profilområde: AI och digitalisering,LTH profilområden,Lunds Tekniska Högskola,Nano Electronics,Lund University Research Groups,LTH Profile Area: AI and Digitalization,LTH Profile areas,Faculty of Engineering, LTH
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- Persson, Karl-Magnus (author)
- Lund University,Lunds universitet,Nanoelektronik,Forskargrupper vid Lunds universitet,Nano Electronics,Lund University Research Groups
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- Subramanian, Gomathy Sandhya (author)
- A*Star Institute of Materials Research and Engineering (IMRE)
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- Wernersson, Lars-Erik (author)
- Lund University,Lunds universitet,Nanoelektronik,Forskargrupper vid Lunds universitet,LTH profilområde: Nanovetenskap och halvledarteknologi,LTH profilområden,Lunds Tekniska Högskola,LTH profilområde: AI och digitalisering,Nano Electronics,Lund University Research Groups,LTH Profile Area: Nanoscience and Semiconductor Technology,LTH Profile areas,Faculty of Engineering, LTH,LTH Profile Area: AI and Digitalization,Faculty of Engineering, LTH
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- Pan, Jisheng (author)
- A*Star Institute of Materials Research and Engineering (IMRE)
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(creator_code:org_t)
- 2022-08-17
- 2022
- English.
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In: Advanced Electronic Materials. - : Wiley. - 2199-160X. ; 8:11
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Abstract
Subject headings
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- Titanium nitride and hafnium oxide stack have been widely used in various resistive memory elements since the materials are complementary-metal-oxide-semiconductor compatible. The understanding of the interface properties between the electrode and the oxide is important in designing the memory behavior. To bridge this understanding, HfOx grown using plasma enhanced atomic layer deposition (PEALD) and thermal atomic layer deposition (TALD) are compared, in terms of band alignment and electrical performances in the HfOx/PEALD TiN stacks. X-ray photoelectron spectroscopy reveals a thicker interfacial TiO2 layer in the PEALD HfOx/TiN stack whose interface resembles more to the PEALD HfOx/TiO2 interface (conduction band offset ΔEC = 1.63 eV), whereas the TALD HfOx stack interface resembles more to the TALD HfOx/TiN interface (ΔEC = 2.22 eV). The increase in the forming voltage and the early onset of reverse filament formation (RFF) in the I–V measurements for the PEALD HfOx stack confirms the presence of the thicker interfacial layer; the early onset of RFF is likely related to a smaller ΔEC. The findings show the importance of understanding the intricate details of the material stack, where ΔEC difference and the presence of a thicker TiO2 interfacial layer due to different deposition procedures affect the device performance.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Materialteknik -- Metallurgi och metalliska material (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Materials Engineering -- Metallurgy and Metallic Materials (hsv//eng)
Publication and Content Type
- art (subject category)
- ref (subject category)
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