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Fabrication and Cha...
Fabrication and Characterization of Ultra-Thin PIN Silicon Detectors for Counting the Passage of MeV Ions
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Abdel, Naseem (author)
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- Pallon, Jan (author)
- Lund University,Lunds universitet,Kärnfysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Nuclear physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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- Graczyk, Mariusz (author)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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- Maximov, Ivan (author)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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- Wallman, Lars (author)
- Lund University,Lunds universitet,Avdelningen för Biomedicinsk teknik,Institutionen för biomedicinsk teknik,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Biomedical Engineering,Departments at LTH,Faculty of Engineering, LTH
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(creator_code:org_t)
- 2013
- 2013
- English.
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In: IEEE Transactions on Nuclear Science. - 0018-9499. ; 60:2, s. 1182-1188
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Abstract
Subject headings
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- This paper describes the fabrication and initial characterization of an ultra-thin silicon PIN detector using a new technique in silicon nanotechnology. In collaboration with the Nuclear Physics Division and the Lund Nano Lab at Lund University, we have developed and manufactured ultra thin Delta E-detectors for spectroscopic applications. The fabrication process has been carried out using a double-polished silicon substrate n-type wafer and locally thinning by means of a 10:1 solution of 25% tetramethyl ammonium hydroxide (TMAH) with Isopropyl alcohol. More than 100 detectors of different thicknesses, down to 5 mu m with active areas ranging from 0.71 to 0.172 mm(2), have been fabricated. The main design considerations of our thin detectors were a very low leakage current below 12 nA and a low full depletion voltage at a reverse bias less than 1.5 V. Finally, most of our thin detectors offer an energy resolution (FWHM) as low as 31 keV for 5.487 MeV alpha particles from a Am-241 source.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology -- Nano-technology (hsv//eng)
- NATURVETENSKAP -- Fysik -- Acceleratorfysik och instrumentering (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Accelerator Physics and Instrumentation (hsv//eng)
Keyword
- Energy resolution
- leakage current
- silicon nanotechnology
- TMAH
- etching
- ultra-thin PIN detector
Publication and Content Type
- art (subject category)
- ref (subject category)
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