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Deposition of HfO2 ...
Deposition of HfO2 on InAs by atomic-layer deposition
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Wheeler, D. (author)
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- Wernersson, Lars-Erik (author)
- Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Faculty of Engineering, LTH
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- Fröberg, Linus (author)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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- Thelander, Claes (author)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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- Mikkelsen, Anders (author)
- Lund University,Lunds universitet,Synkrotronljusfysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Synchrotron Radiation Research,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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Weststrate, K. -J. (author)
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Sonnet, A. (author)
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Vogel, E. M. (author)
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Seabaugh, A. (author)
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(creator_code:org_t)
- Elsevier BV, 2009
- 2009
- English.
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In: Microelectronic Engineering. - : Elsevier BV. - 1873-5568 .- 0167-9317. ; 86:7-9, s. 1561-1563
- Related links:
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http://dx.doi.org/10...
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https://lup.lub.lu.s...
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https://doi.org/10.1...
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Abstract
Subject headings
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- Metal-oxide-semiconductor (MOS) capacitors are formed on bulk InAs substrates by atomic-layer deposition (ALD) of HfO2. Prior to film growth, InAs substrates receive a wet-chemical treatment of HCl, buffered HF (BHF), or (NH4)(2)S. Hafnium dioxide films are grown using 75 ALD cycles with substrate temperatures of 100, 200, and 300 degrees C. Substrate temperature is found to have a significant influence on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the capacitors, while the influence of substrate pretreatment manifests itself in interface trap density, D-it, as measured by the Terman method. (C) 2009 Elsevier B.V. All rights reserved.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- Atomic-layer deposition
- III-V Metal-oxide-semiconductor
- Hafnium dioxide
- Indium arsenide
Publication and Content Type
- kon (subject category)
- ref (subject category)
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