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Bipolar Monte Carlo...
Bipolar Monte Carlo simulation of hot carriers in III-N LEDs
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- Kivisaari, Pyry (author)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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- Sadi, Toufik (author)
- University of Glasgow
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- Li, Jingrui (author)
- Aalto University
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- Oksanen, Jani (author)
- Aalto University
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- Rinke, Patrick (author)
- Aalto University
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- Tulkki, Jukka (author)
- Aalto University
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(creator_code:org_t)
- 2015
- 2015
- English 2 s.
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In: 15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015. - 9781479983797 ; 2015-May, s. 11-12
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Abstract
Subject headings
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- We perform fully bipolar Monte Carlo simulations of electrons and holes in III-Nitride multi-quantum well light-emitting diodes (LEDs) to investigate the effects of hot carriers. Our results show how accounting for hot carriers affects the current-voltage characteristics and device efficiency. We also discuss the effects of bandstructure details on the simulation results. Further simulations with versatile QW and EBL configurations are needed to confirm the relationship between hot carrier effects and current-voltage characteristics.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- Charge carrier processes
- Gallium nitride
- Hot carrier effects
- Light emitting diodes
- Monte Carlo methods
- Scattering
Publication and Content Type
- kon (subject category)
- ref (subject category)
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