Axial InP Nanowire Tandem Junction Grown on a Silicon Substrate

Heurlin, Magnus (author): Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH

Wickert, Peter (author)

Fält, Stefan (author)

Borgström, Magnus (author): Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH

Deppert, Knut (author): Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH

Samuelson, Lars (author): Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH

Magnusson, Martin (author): Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH

(creator_code:org_t)

American Chemical Society (ACS), 2011
2011
English.
In: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 11:5, s. 2028-2031

Related links:: http://dx.doi.org/10...; show more...; https://lup.lub.lu.s...; https://doi.org/10.1...; show less...

Abstract Subject headings

Tandem InP nanowire pn-junctions have been grown on a Si substrate using metal-organic vapor phase epitaxy. In situ HCl etching allowed the different subcomponents to be stacked on top of each other in the axial extension of the nanowires without detrimental radial growth. Electro-optical measurements on a single nanowire tandem pn-junction device show an open-circuit voltage of 1.15 V under illumination close to 1 sun, which is an increase of 67% compared to a single pn-junction device.

By the author/editor: Heurlin, Magnus; Wickert, Peter; Fält, Stefan; Borgström, Magnu ...; Deppert, Knut; Samuelson, Lars; show more...; Magnusson, Marti ...; show less...

About the subject

ENGINEERING AND TECHNOLOGY: ENGINEERING AND ...; and Nano technology; and Nano technology

NATURAL SCIENCES: NATURAL SCIENCES; and Physical Science ...; and Condensed Matter ...

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