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Navigation aids in the search for future high-k dielectrics: physical and electrical trends
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- Engström, Olof, 1943 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Raeissi, Bahman, 1979 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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Hall, Steve (author)
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Buiu, Octavian (author)
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Lemme, Max (author)
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Gottlob, Heiner (author)
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Hurley, Paul (author)
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Cherkaoui, Karim (author)
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(creator_code:org_t)
- 2006
- 2006
- English.
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In: Proceeding of 7th European Workshop on Ultimate Integration of Silicon (ULIS 2006), p.115-118, April 20-21, Grenoble, France (2006).. ; , s. 115-118
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Abstract
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- From experimental literature data on metal oxides combinedwith theoretical estimates, we present empirical relations for k-values and energy band offset values, that can be used in the search for gate dielectric materials fulfilling the needs of future CMOS generations. Only a few materials investigated so far have properties meeting the demands for k and energy band offset values in the development of CMOS down to 22 nm.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- Dielectric Constant
- High-k Dielectric
- Physical Properties of Dielectrics
Publication and Content Type
- art (subject category)
- ref (subject category)
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Engström, Olof, ...
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Raeissi, Bahman, ...
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Hall, Steve
-
Buiu, Octavian
-
Lemme, Max
-
Gottlob, Heiner
-
show more...
-
Hurley, Paul
-
Cherkaoui, Karim
-
show less...
- About the subject
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- ENGINEERING AND TECHNOLOGY
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ENGINEERING AND ...
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and Electrical Engin ...
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and Other Electrical ...
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Chalmers University of Technology