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Navigation aids in the search for future high-k dielectrics: physical and electrical trends

Engström, Olof, 1943 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Raeissi, Bahman, 1979 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Hall, Steve (author)
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Buiu, Octavian (author)
Lemme, Max (author)
Gottlob, Heiner (author)
Hurley, Paul (author)
Cherkaoui, Karim (author)
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 (creator_code:org_t)
2006
2006
English.
In: Proceeding of 7th European Workshop on Ultimate Integration of Silicon (ULIS 2006), p.115-118, April 20-21, Grenoble, France (2006).. ; , s. 115-118
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • From experimental literature data on metal oxides combinedwith theoretical estimates, we present empirical relations for k-values and energy band offset values, that can be used in the search for gate dielectric materials fulfilling the needs of future CMOS generations. Only a few materials investigated so far have properties meeting the demands for k and energy band offset values in the development of CMOS down to 22 nm.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

Dielectric Constant
High-k Dielectric
Physical Properties of Dielectrics

Publication and Content Type

art (subject category)
ref (subject category)

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