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- Engström, Olof,1943Chalmers tekniska högskola,Chalmers University of Technology (author)
Navigation aids in the search for future high-k dielectrics: physical and electrical trends
- Article/chapterEnglish2006
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- 2006
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- LIBRIS-ID:oai:research.chalmers.se:006ae69d-d555-4a7c-95a8-53c76a098dc7
- https://research.chalmers.se/publication/25790URI
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- Language:English
- Summary in:English
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- From experimental literature data on metal oxides combinedwith theoretical estimates, we present empirical relations for k-values and energy band offset values, that can be used in the search for gate dielectric materials fulfilling the needs of future CMOS generations. Only a few materials investigated so far have properties meeting the demands for k and energy band offset values in the development of CMOS down to 22 nm.
Subject headings and genre
- TEKNIK OCH TEKNOLOGIER Elektroteknik och elektronik Annan elektroteknik och elektronik hsv//swe
- ENGINEERING AND TECHNOLOGY Electrical Engineering, Electronic Engineering, Information Engineering Other Electrical Engineering, Electronic Engineering, Information Engineering hsv//eng
- Dielectric Constant
- High-k Dielectric
- Physical Properties of Dielectrics
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- Raeissi, Bahman,1979Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)raeissin (author)
- Hall, Steve (author)
- Buiu, Octavian (author)
- Lemme, Max (author)
- Gottlob, Heiner (author)
- Hurley, Paul (author)
- Cherkaoui, Karim (author)
- Chalmers tekniska högskola (creator_code:org_t)
Related titles
- In:Proceeding of 7th European Workshop on Ultimate Integration of Silicon (ULIS 2006), p.115-118, April 20-21, Grenoble, France (2006)., s. 115-118
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