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Engström, Olof,1943Chalmers tekniska högskola,Chalmers University of Technology
(author)
Navigation aids in the search for future high-k dielectrics: physical and electrical trends
- Article/chapterEnglish2006
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LIBRIS-ID:oai:research.chalmers.se:006ae69d-d555-4a7c-95a8-53c76a098dc7
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https://research.chalmers.se/publication/25790URI
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Language:English
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Summary in:English
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Subject category:art swepub-publicationtype
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Subject category:ref swepub-contenttype
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From experimental literature data on metal oxides combinedwith theoretical estimates, we present empirical relations for k-values and energy band offset values, that can be used in the search for gate dielectric materials fulfilling the needs of future CMOS generations. Only a few materials investigated so far have properties meeting the demands for k and energy band offset values in the development of CMOS down to 22 nm.
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Raeissi, Bahman,1979Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)raeissin
(author)
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Hall, Steve
(author)
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Buiu, Octavian
(author)
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Lemme, Max
(author)
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Gottlob, Heiner
(author)
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Hurley, Paul
(author)
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Cherkaoui, Karim
(author)
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Chalmers tekniska högskola
(creator_code:org_t)
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In:Proceeding of 7th European Workshop on Ultimate Integration of Silicon (ULIS 2006), p.115-118, April 20-21, Grenoble, France (2006)., s. 115-118
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Engström, Olof, ...
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Raeissi, Bahman, ...
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Hall, Steve
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Buiu, Octavian
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Lemme, Max
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Gottlob, Heiner
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Hurley, Paul
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Cherkaoui, Karim
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- ENGINEERING AND TECHNOLOGY
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ENGINEERING AND ...
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and Electrical Engin ...
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Chalmers University of Technology