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Enhancement of opti...
Enhancement of optical quality in metamorphic quantum wells using dilute nitride buffers
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- Song, Yuxin, 1981 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Wang, Shu Min, 1963 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Lai, Zonghe, 1948 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Sadeghi, Mahdad, 1964 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- AIP Publishing, 2010
- 2010
- English.
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 97:9, s. 091903-
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Abstract
Subject headings
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- Strong enhancement of optical quality in quantum wells by incorporating nitrogen in metamorphic InGaAs buffers grown on GaAs substrates is demonstrated. This has resulted in 3.7 or 5.4 times enhancement of photoluminescence intensity from the metamorphic quantum wells when using dilute nitride superlattice alone or adding nitrogen in a strain compensated GaAs/In0.3Al0.7As superlattice, respectively. This study shows great potentials by incorporating N in metamorphic buffers to further improve the quality of metamorphic optoelectronic devices.
Subject headings
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Materialteknik -- Annan materialteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Materials Engineering -- Other Materials Engineering (hsv//eng)
Keyword
- dislocation
- metamorhpic
- MBE
- dilute nitride
Publication and Content Type
- art (subject category)
- ref (subject category)
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