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Impact of the oxide...
Impact of the oxide aperture width on the degradation of 845 nm VCSELs for silicon photonics
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- Zenari, M. (author)
- Università Degli Studi di Padova,University of Padua
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- Buffolo, M. (author)
- Università Degli Studi di Padova,University of Padua
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- Rampazzo, Fabiana (author)
- Università Degli Studi di Padova,University of Padua
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- De Santi, C. (author)
- Università Degli Studi di Padova,University of Padua
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- Rossi, Francesca (author)
- Istituto dei Materiali per l'Elettronica ed il Magnetismo,Institute of Materials for Electronics and Magnetism
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- Lazzarini, Laura (author)
- Istituto dei Materiali per l'Elettronica ed il Magnetismo,Institute of Materials for Electronics and Magnetism
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Goyvaerts, J. (author)
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- Grabowski, Alexander, 1993 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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Gustavsson, Johan, 1974 (author)
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- Baets, Roel G. (author)
- Universiteit Gent,Ghent university
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Larsson, A. (author)
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- Roelkens, Gunther (author)
- Universiteit Gent,Ghent university
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- Meneghesso, G. (author)
- Università Degli Studi di Padova,University of Padua
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- Zanoni, E. (author)
- Università Degli Studi di Padova,University of Padua
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- Meneghini, M. (author)
- Università Degli Studi di Padova,University of Padua
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(creator_code:org_t)
- 2024
- 2024
- English.
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In: IEEE Journal of Selected Topics in Quantum Electronics. - 1558-4542 .- 1077-260X. ; In Press
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Abstract
Subject headings
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- For the first time, we analyzed the degradation as a function of the oxide aperture in 845 nm VCSELs designed for silicon photonics (SiPh) applications. First, we evaluated the optical degradation of the devices by collecting EL images during a constant current stress. The experimental results showed an increased spreading of the optical beam of the VCSEL with increasing ageing time. Based on numerical simulations, we demonstrated that the electrical degradation (increase in series resistance) is responsible a larger current spreading which, in turn, increases the FWHM (full width half maximum) of the optical beam. We further evaluated the series resistance variation by aging four lasers with different oxide apertures. The results of this set of experiments showed that the electrical degradation is stronger as the oxide aperture is smaller, and mostly depends on the contribution of the top DBR resistance. Thanks to our analysis we proved that the use of a larger aperture can result in a better device reliability.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Telekommunikation (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Telecommunications (hsv//eng)
Keyword
- Optical imaging
- Degradation
- Degradation
- Oxide aperture
- Apertures
- Stress
- Optical beams
- Diffusion
- Vertical cavity surface emitting lasers
- Resistance
- PICs
- VCSEL
Publication and Content Type
- art (subject category)
- ref (subject category)
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- By the author/editor
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Zenari, M.
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Buffolo, M.
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Rampazzo, Fabian ...
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De Santi, C.
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Rossi, Francesca
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Lazzarini, Laura
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show more...
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Goyvaerts, J.
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Grabowski, Alexa ...
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Gustavsson, Joha ...
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Baets, Roel G.
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Larsson, A.
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Roelkens, Gunthe ...
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Meneghesso, G.
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Zanoni, E.
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Meneghini, M.
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show less...
- About the subject
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- ENGINEERING AND TECHNOLOGY
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ENGINEERING AND ...
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and Electrical Engin ...
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and Telecommunicatio ...
- Articles in the publication
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IEEE Journal of ...
- By the university
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Chalmers University of Technology