Impact of the oxide aperture width on the degradation of 845 nm VCSELs for silicon photonics

Rampazzo, Fabiana (author): Università Degli Studi di Padova,University of Padua

Rossi, Francesca (author): Istituto dei Materiali per l'Elettronica ed il Magnetismo,Institute of Materials for Electronics and Magnetism

Lazzarini, Laura (author): Istituto dei Materiali per l'Elettronica ed il Magnetismo,Institute of Materials for Electronics and Magnetism

Goyvaerts, J. (author)

Grabowski, Alexander, 1993 (author): Chalmers tekniska högskola,Chalmers University of Technology

Gustavsson, Johan, 1974 (author)

Larsson, A. (author)

Meneghesso, G. (author): Università Degli Studi di Padova,University of Padua

Meneghini, M. (author): Università Degli Studi di Padova,University of Padua

(creator_code:org_t)

2024
2024
English.
In: IEEE Journal of Selected Topics in Quantum Electronics. - 1558-4542 .- 1077-260X. ; In Press

Related links:: https://doi.org/10.1...; show more...; https://research.cha...; show less...

Abstract Subject headings

For the first time, we analyzed the degradation as a function of the oxide aperture in 845 nm VCSELs designed for silicon photonics (SiPh) applications. First, we evaluated the optical degradation of the devices by collecting EL images during a constant current stress. The experimental results showed an increased spreading of the optical beam of the VCSEL with increasing ageing time. Based on numerical simulations, we demonstrated that the electrical degradation (increase in series resistance) is responsible a larger current spreading which, in turn, increases the FWHM (full width half maximum) of the optical beam. We further evaluated the series resistance variation by aging four lasers with different oxide apertures. The results of this set of experiments showed that the electrical degradation is stronger as the oxide aperture is smaller, and mostly depends on the contribution of the top DBR resistance. Thanks to our analysis we proved that the use of a larger aperture can result in a better device reliability.

TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Telekommunikation (hsv//swe)
ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Telecommunications (hsv//eng)

By the author/editor: Zenari, M.; Buffolo, M.; Rampazzo, Fabian ...; De Santi, C.; Rossi, Francesca; Lazzarini, Laura; show more...; Goyvaerts, J.; Grabowski, Alexa ...; Gustavsson, Joha ...; Baets, Roel G.; Larsson, A.; Roelkens, Gunthe ...; Meneghesso, G.; Zanoni, E.; Meneghini, M.; show less...

About the subject

ENGINEERING AND TECHNOLOGY: ENGINEERING AND ...; and Electrical Engin ...; and Telecommunicatio ...

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