Carbon-doped GaN on SiC materials for low-memory-effect devices

• AlGaN/GaN on SiC HEMT structures suitable for high power, high frequency applications are demonstrated. The material manifests record breaking thermal management and electron mobility. Moreover, thanks to the fact that the buffer layer is doped with carbon, the memory effect of processed devices is very low making system design and manufacturing significantly easier and less expensive.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Nanoteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Nano-technology (hsv//eng)

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Publication and Content Type

kon (subject category)

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