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Defect studies in MBE grown GaSb1-x Bi x layers
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- Segercrantz, N. (author)
- Aalto-Yliopisto,Aalto University
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- Kujala, J. (author)
- Aalto-Yliopisto,Aalto University
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- Tuomisto, F. (author)
- Aalto-Yliopisto,Aalto University
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- (creator_code:org_t)
- AIP Publishing LLC, 2014
- 2014
- English.
- In: AIP Conference Proceedings. - : AIP Publishing LLC. - 1551-7616 .- 0094-243X. ; 1583, s. 174-177
- Conference paper (peer-reviewed)
Abstract
Subject headings
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- Positron annihilation spectroscopy in Doppler broadening mode is used to study epitaxial layers of GaSb 1-x Bi x on undoped GaSb. The samples were grown by Molecular Beam Epitaxy at different temperatures and with different Bi/Sb beam equivalent pressure ratios resulting in Bi concentrations of 0-0.7 %. The results show a relationship between the growth parameters and Doppler broadening parameters. Incorporating Bi into GaSb decreases the vacancy concentration in the epitaxial layers compared to the sample with no Bi in the epitaxial layer.
Subject headings
- NATURVETENSKAP -- Fysik -- Atom- och molekylfysik och optik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Atom and Molecular Physics and Optics (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Materialteknik -- Annan materialteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Materials Engineering -- Other Materials Engineering (hsv//eng)
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- GaSbBi
- GaSb
- Doppler broadening
- defect
- vacancy
- positron annihilation spectroscopy
Publication and Content Type
- kon (subject category)
- ref (subject category)
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- NATURAL SCIENCES
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