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A highly linear dou...
A highly linear double balanced Schottky diode S-band mixer
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- Sudow, Mattias, 1980 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Andersson, Kristoffer, 1976 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Nilsson, Per-Åke, 1964 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Rorsman, Niklas, 1964 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- 2006
- 2006
- English.
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In: IEEE Microwave and Wireless Components Letters. - 1558-1764 .- 1531-1309. ; 16:6, s. 336 - 8
- Related links:
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Abstract
Subject headings
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- A high-level double balanced SiC Schottky diode mixer in SiC monolithic microwave integrated circuit (MMIC) technology has been designed, processed and characterized. The mixer is a single ended in- and output circuit with coupled transformers as baluns to enable a compact design, resulting in a total area of 2.2×2.2mm2. The mixer has a maximum IIP3 of 38dBm and IIP2 of 58dBm at 3.3GHz, and a typical P1 dB of 23dBm in the S-band. The minimum conversion loss was 12dBm at 2.4GHz. The high power operation of the mixer shows that SiC MMIC can perform well in high microwave radiation environments
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Publication and Content Type
- art (subject category)
- ref (subject category)
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