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Electroluminescence...
Electroluminescence from silicon p-n junctions prepared by wafer bonding
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- Sveinbjörnsson, Einar, 1964 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Bengtsson, Stefan, 1961 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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Weber, J. (author)
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Keskitalo, N. (author)
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(creator_code:org_t)
- 1998
- 1998
- English.
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In: Proceedings of the Fourth International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications. ; , s. 264-
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Abstract
Subject headings
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- We report on electro- and photoluminescence from silicon p-n diodes formed by hydrophobic wafer bonding. Four main spectral features associated with the bonded interface are detected at photon energies between 0.8 and 0.9 eV. Two of these signals are identified as the dislocation-related signals D1 and D2 while two peaks at 0.83 eV and 0.89 eV remain unidentified. However, we observe a signal similar to the 0.83 eV signal in polysilicon and at the junction of a silicon bicrystal
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- dislocations
- wafer bonding
- semiconductor diodes
- bicrystals
- photoluminescence
- electroluminescence
- elemental semiconductors
- p-n junctions
- silicon
- surface chemistry
Publication and Content Type
- kon (subject category)
- ref (subject category)
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