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Effect of graphene substrate type on formation of Bi 2 Se 3 nanoplates

Andzane, J. (author)
Latvijas Universitate,University of Latvia
Britala, Liga (author)
Latvijas Universitate,University of Latvia
Kauranens, Edijs (author)
Latvijas Universitate,University of Latvia
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Neciporenko, Aleksandrs (author)
Latvijas Universitate,University of Latvia
Baitimirova, M. (author)
Latvijas Universitate,University of Latvia
Lara Avila, Samuel, 1983 (author)
National Physical Laboratory (NPL),Chalmers tekniska högskola,Chalmers University of Technology
Kubatkin, Sergey, 1959 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Bechelany, Mikhael (author)
Université de Montpellier,University of Montpellier
Érts, Donats (author)
Latvijas Universitate,University of Latvia
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 (creator_code:org_t)
2019-03-18
2019
English.
In: Scientific Reports. - : Springer Science and Business Media LLC. - 2045-2322 .- 2045-2322. ; 9:1
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • Knowledge of nucleation and further growth of Bi 2 Se 3 nanoplates on different substrates is crucial for obtaining ultrathin nanostructures and films of this material by physical vapour deposition technique. In this work, Bi 2 Se 3 nanoplates were deposited under the same experimental conditions on different types of graphene substrates (as-transferred and post-annealed chemical vapour deposition grown monolayer graphene, monolayer graphene grown on silicon carbide substrate). Dimensions of the nanoplates deposited on graphene substrates were compared with the dimensions of the nanoplates deposited on mechanically exfoliated mica and highly ordered pyrolytic graphite flakes used as reference substrates. The influence of different graphene substrates on nucleation and further lateral and vertical growth of the Bi 2 Se 3 nanoplates is analysed. Possibility to obtain ultrathin Bi 2 Se 3 thin films on these substrates is evaluated. Between the substrates considered in this work, graphene grown on silicon carbide is found to be the most promising substrate for obtaining of 1–5 nm thick Bi 2 Se 3 films.

Subject headings

NATURVETENSKAP  -- Kemi -- Oorganisk kemi (hsv//swe)
NATURAL SCIENCES  -- Chemical Sciences -- Inorganic Chemistry (hsv//eng)
TEKNIK OCH TEKNOLOGIER  -- Materialteknik -- Bearbetnings-, yt- och fogningsteknik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Materials Engineering -- Manufacturing, Surface and Joining Technology (hsv//eng)
TEKNIK OCH TEKNOLOGIER  -- Materialteknik -- Annan materialteknik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Materials Engineering -- Other Materials Engineering (hsv//eng)
NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

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