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A Comparative Study of Freewheeling Methods for eGaN HEMTs in a Phase-leg Configuration

Qin, Haihong (author)
Nanjing University of Aeronautics and Astronautics
Peng, Zihe (author)
Nanjing University of Aeronautics and Astronautics
Zhang, Ying (author)
China Electronic Technology Group Corporation
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Xun, Qian, 1990 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Fu, Dafeng (author)
Nanjing University of Aeronautics and Astronautics
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 (creator_code:org_t)
2021
2021
English.
In: IEEE Journal of Emerging and Selected Topics in Power Electronics. - 2168-6777 .- 2168-6785. ; 9:3, s. 3657-3670
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • Enhancement Gallium nitride high-electron mobility transistors (eGaN HEMTs) have been developed with lower conduction losses and higher switching speed compared to MOSFETs. Self-commutated reverse conduction (SCRC) mechanism determines no reverse recovery phenomenon but larger reverse conduction voltage drop of eGaN HEMTs than the body diodes in traditional Si MOSFETs or other freewheeling diodes. To reduce the large reverse conduction loss of eGaN HEMTs, the performance of different freewheeling methods for eGaN HEMTs in a phase-leg configuration is compared in this paper. Firstly, the reverse conduction mechanism and characteristics of eGaN HEMTs are analyzed. Then, four freewheeling ways for eGaN HEMTs are introduced, and the equivalent circuits are also given and analyzed. A double pulse test platform is established to further explore the influence of the freewheeling ways on the conduction and switching characteristics. Finally, the total losses of a phase-leg configuration with different freewheeling ways based on a buck converter is analyzed and compared. The paper aims to give a guidance to properly select freewheeling ways for eGaN HEMTs under different operation conditions.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Maskinteknik -- Energiteknik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Mechanical Engineering -- Energy Engineering (hsv//eng)
TEKNIK OCH TEKNOLOGIER  -- Materialteknik -- Annan materialteknik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Materials Engineering -- Other Materials Engineering (hsv//eng)
TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

enhancement gallium nitride high-electron-mobility transistors (eGaN HEMTs)
freewheeling
Body diodes
MOSFETs
reverse conduction

Publication and Content Type

art (subject category)
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Qin, Haihong
Peng, Zihe
Zhang, Ying
Xun, Qian, 1990
Fu, Dafeng
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ENGINEERING AND TECHNOLOGY
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and Mechanical Engin ...
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ENGINEERING AND TECHNOLOGY
ENGINEERING AND ...
and Materials Engine ...
and Other Materials ...
ENGINEERING AND TECHNOLOGY
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Chalmers University of Technology

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