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Metamorphic HEMT te...
Metamorphic HEMT technology for low-noise applications
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- Leuther, A. (author)
- Fraunhofer-Institut fur Angewandte Festkorperphysik - IAF
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- Tessmann, A. (author)
- Fraunhofer-Institut fur Angewandte Festkorperphysik - IAF
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- Kallfass, I. (author)
- Fraunhofer-Institut fur Angewandte Festkorperphysik - IAF
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- Lösch, R. (author)
- Fraunhofer-Institut fur Angewandte Festkorperphysik - IAF
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- Seelmann-Eggebert, M. (author)
- Fraunhofer-Institut fur Angewandte Festkorperphysik - IAF
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- Wadefalk, Niklas, 1973 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Schafer, F. (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Puyol, J.D.G. (author)
- Max Planck Gesellschaft zur Förderung der Wissenschaften e.V. (MPG),Max Planck Society for the Advancement of Science (MPG)
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- Schlechtweg, M. (author)
- Observatorio de Yebes (IGN),Yebes Observatory
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- Mikulla, M. (author)
- Fraunhofer-Institut fur Angewandte Festkorperphysik - IAF
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- Ambacher, O. (author)
- Fraunhofer-Institut fur Angewandte Festkorperphysik - IAF
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(creator_code:org_t)
- ISBN 9781424434336
- 2009
- 2009
- English.
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In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. - 1092-8669. - 9781424434336 ; , s. 188-191
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Abstract
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- Different noise sources in HEMTs are discussed, and state-of-the-art low-noise amplifiers based on the Fraunhofer IAF 100 nm and 50 nm gate length metamorphic HEMT (mHEMT) process are presented. These mHEMT technology feature an extrinsic f T of 220 / 375 GHz and an extrinsic transconduction g m , max , of 1300 / 1800 mS/mm. By using the 50 nm technology several low-noise amplifier MMICs were realized. A small signal gain of 21 dB and a noise figure of 1.9 dB was measured in the frequency range between 80 and 100 GHz at ambient temperature. To investigate the low temperature behaviour of the 100 nm technology, single 4 * 40 μm mHEMTs were integrated in hybrid 4 - 8 GHz (Chalmers) and 16 - 26 GHz (Yebes) amplifiers. At cryogenic temperatures noise temperatures of 3 K at 5 GHz and 12 K at 22 GHz were achieved.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
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- ref (subject category)
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- By the author/editor
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Leuther, A.
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Tessmann, A.
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Kallfass, I.
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Lösch, R.
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Seelmann-Eggeber ...
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Wadefalk, Niklas ...
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show more...
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Schafer, F.
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Puyol, J.D.G.
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Schlechtweg, M.
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Mikulla, M.
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Ambacher, O.
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show less...
- About the subject
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- ENGINEERING AND TECHNOLOGY
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ENGINEERING AND ...
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and Electrical Engin ...
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Chalmers University of Technology