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The Fermi energy as common parameter to describe charge compensation mechanisms: A path to Fermi level engineering of oxide electroceramics

Klein, Andreas (author)
Technische Universität Darmstadt
Albe, K. (author)
Technische Universität Darmstadt
Bein, Nicole (author)
Technische Universität Darmstadt
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Clemens, Oliver (author)
Universität Stuttgart,University of Stuttgart
Creutz, Kim Alexander (author)
Technische Universität Darmstadt
Erhart, Paul, 1978 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Frericks, Markus (author)
Technische Universität Darmstadt
Ghorbani, Elaheh (author)
Technische Universität Darmstadt
Hofmann, Jan Philipp (author)
Technische Universität Darmstadt
Huang, Binxiang (author)
Technische Universität Darmstadt
Kaiser, Bernhard (author)
Technische Universität Darmstadt
Kolb, Ute (author)
Johannes Gutenberg-Universität Mainz,Johannes Gutenberg University Mainz,Technische Universität Darmstadt
Koruza, Jurij (author)
Technische Universität Graz
Kubel, C. (author)
Karlsruher Institut für Technologie (KIT),Karlsruhe Institute of Technology (KIT),Technische Universität Darmstadt
Lohaus, Katharina N.S. (author)
Technische Universität Darmstadt
Rödel, Jürgen (author)
Technische Universität Darmstadt
Rohrer, Jochen, 1978 (author)
Technische Universität Darmstadt
Rheinheimer, Wolfgang (author)
Forschungszentrum Jülich GmbH
Souza, Roger A. (author)
Rheinisch-Westfaelische Technische Hochschule Aachen,RWTH Aachen University
Streibel, Verena (author)
Technische Universität München (TUM),Technical University of Munich (TUM)
Weidenkaff, Anke (author)
Technische Universität Darmstadt,Fraunhofer Project Group Materials Recycling and Resource Strategies IWKS
Widenmeyer, Marc (author)
Technische Universität Darmstadt
Xu, Bai Xiang (author)
Technische Universität Darmstadt
Zhang, Hongbin (author)
Technische Universität Darmstadt
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 (creator_code:org_t)
2023
2023
English.
In: Journal of Electroceramics. - 1573-8663 .- 1385-3449. ; 51
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • Chemical substitution, which can be iso- or heterovalent, is the primary strategy to tailor material properties. There are various ways how a material can react to substitution. Isovalent substitution changes the density of states while heterovalent substitution, i.e. doping, can induce electronic compensation, ionic compensation, valence changes of cations or anions, or result in the segregation or neutralization of the dopant. While all these can, in principle, occur simultaneously, it is often desirable to select a certain mechanism in order to determine material properties. Being able to predict and control the individual compensation mechanism should therefore be a key target of materials science. This contribution outlines the perspective that this could be achieved by taking the Fermi energy as a common descriptor for the different compensation mechanisms. This generalization becomes possible since the formation enthalpies of the defects involved in the various compensation mechanisms do all depend on the Fermi energy. In order to control material properties, it is then necessary to adjust the formation enthalpies and charge transition levels of the involved defects. Understanding how these depend on material composition will open up a new path for the design of materials by Fermi level engineering.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Materialteknik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Materials Engineering (hsv//eng)
NATURVETENSKAP  -- Fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

Keyword

Grain boundaries
Oxides
Ceramic processing
Space-charge regions
Defects
Interfaces
Segregation
Charge compensation
Electroceramics
Fermi energy
Surfaces

Publication and Content Type

art (subject category)
ref (subject category)

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