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Photoluminescence E...
Photoluminescence Evolution with Deposition Thickness of Ge Nanostructures Embedded in GaSb
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- Dou, Cheng (author)
- Chinese Academy of Sciences,University of Shanghai for Science and Technology
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- Chen, X (author)
- Chinese Academy of Sciences
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- Chen, Q. (author)
- Chinese Academy of Sciences
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- Song, Y (author)
- Chinese Academy of Sciences
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- Ma, Nan (author)
- Chinese Academy of Sciences
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- Zhu, Liangqing (author)
- Chinese Academy of Sciences,East China Normal University
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Tan, Chuan Seng (author)
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- Han, Li (author)
- Chinese Academy of Sciences
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- Yu, Dengguang (author)
- University of Shanghai for Science and Technology
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- Wang, Shu Min, 1963 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Shao, J. (author)
- Chinese Academy of Sciences
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(creator_code:org_t)
- 2022-01-22
- 2022
- English.
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In: Physica Status Solidi (B): Basic Research. - : Wiley. - 1521-3951 .- 0370-1972. ; 259:4
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Abstract
Subject headings
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- Herein, low-temperature and temperature-dependent photoluminescence (PL) measurements are carried out on highly tensile-strained Ge nanostructures embedded in GaSb matrix, and the effects of Ge deposition thickness are clarified. The direct-gap transition-related PL feature is successfully identified in the tensile-strained Ge nanostructures. While typical PL thermal quenching is observed for the tensile-strained Ge- and GaSb-related transitions in the samples with a Ge deposition being thinner than the critical thickness, a negative thermal quenching shows up for the GaSb interband transition in the samples with Ge deposition surpassing the critical thickness at which high-density nanoparticles form to relax the strain. A phenomenological thermal-injection model is established of electrons from the tensile-strained Ge layer to the GaSb matrix, the thermal quenching is accounted for, and a ladder-like function of the strain-relaxed Ge is clarified to favor the electron activation. The understanding of the effects of deposition thickness is helpful for the high-performance Ge-based light source for optoelectronic integration.
Subject headings
- NATURVETENSKAP -- Fysik -- Annan fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Other Physics Topics (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Materialteknik -- Annan materialteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Materials Engineering -- Other Materials Engineering (hsv//eng)
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- Nanostructures
- Deposition
- Germanium
- Photoluminescence
- Antimony compounds
- Gallium compounds
- Quenching
- Temperature
- Light sources
Publication and Content Type
- art (subject category)
- ref (subject category)
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- By the author/editor
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Dou, Cheng
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Chen, X
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Chen, Q.
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Song, Y
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Ma, Nan
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Zhu, Liangqing
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Tan, Chuan Seng
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Han, Li
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Yu, Dengguang
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Wang, Shu Min, 1 ...
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Shao, J.
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- About the subject
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- NATURAL SCIENCES
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NATURAL SCIENCES
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and Physical Science ...
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and Other Physics To ...
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- ENGINEERING AND TECHNOLOGY
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ENGINEERING AND ...
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and Materials Engine ...
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and Other Materials ...
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- NATURAL SCIENCES
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NATURAL SCIENCES
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and Physical Science ...
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and Condensed Matter ...
- Articles in the publication
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Physica Status S ...
- By the university
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Chalmers University of Technology