Fabrication process and 110 GHz measurement result of MS-to-CPW RF-via transition for RF-MEMS devices packaging applications

• This paper presents the fabrication process of RF-via (0-level) and flip-chip bump (1-level) transitions for applications of packaging MS (microstrip) RF-MEMS devices. The interconnect structure with MS-to-CPW transition between GaAs MEMS substrate and Al2O3 motherboard was in-house fabricated. A novel fabrication process for RF-MEMS packaging is in detail. After fabrication, the samples were measured up to 110 GHz using on-wafer probing measurement. From the measured results, the insertion loss of entire interconnect structure is better than -2 dB up to 100 GHz, documenting the feasibility for millimeter-wave RF-MEMS devices packaging applications.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

Fabrication

Packaging

Microelectromechanical device

Microstrip

Millimeter-wave

Publication and Content Type

kon (subject category)

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