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High performance, l...
High performance, long wavelength InGaAs/GaAs multiple quantum-well lasers grown by molecular beam epitaxy
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- Adolfsson, Göran, 1981 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Wang, Shu Min, 1963 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Sadeghi, Mahdad, 1964 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Larsson, Anders, 1957 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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show less...
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(creator_code:org_t)
- 2007
- 2007
- English.
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In: Electronic Letters. ; 43:8, s. 454-456
- Related links:
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https://research.cha...
Abstract
Subject headings
Close
- High-quality 1.2 µm InGaAs/GaAs single and triple quantum well lasers grown by molecular beam epitaxy are demonstrated. For the triple quantum well, a record low threshold current density of 107 A/cm2/well is achieved for a 100 x 1000 µm laser.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Telekommunikation (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Telecommunications (hsv//eng)
Publication and Content Type
- art (subject category)
- ref (subject category)
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