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Composition Depende...
Composition Dependence of Structural and Electronic Properties of Quaternary InGaNBi
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- Liang, D. (author)
- Beijing University of Posts and Telecommunications (BUPT)
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- Zhu, Pengfei (author)
- Beijing University of Posts and Telecommunications (BUPT)
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- Han, L. H. (author)
- Beijing University of Posts and Telecommunications (BUPT)
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- Zhang, Tao (author)
- Sichuan University
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- Li, Yang (author)
- Beijing University of Posts and Telecommunications (BUPT)
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- Li, Shanjun (author)
- Sichuan University
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- Wang, Shu Min, 1963 (author)
- Chinese Academy of Sciences,Chalmers tekniska högskola,Chalmers University of Technology
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- Lu, P. F. (author)
- Beijing University of Posts and Telecommunications (BUPT)
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(creator_code:org_t)
- 2019-05-28
- 2019
- English.
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In: Nanoscale Research Letters. - : Springer Science and Business Media LLC. - 1556-276X .- 1931-7573. ; 14
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Abstract
Subject headings
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- To realize feasible band structure engineering and hence enhanced luminescence efficiency, InGaNBi is an attractive alloy which may be exploited in photonic devices of visible light and mid-infrared. In present study, the structural, electronic properties such as bandgap, spin-orbit splitting energy, and substrate strain of InGaNBi versus In and Bi compositions are studied by using first-principles calculations. The lattice parameters increase almost linearly with increasing In and Bi compositions. By bismuth doping, the quaternary InGaNBi bandgap could cover a wide energy range from 3.273 to 0.651 eV for Bi up to 9.375% and In up to 50%, corresponding to the wavelength range from 0.38-1.9 µm. The calculated spin-orbit splitting energy are about 0.220 eV for 3.125%, 0.360 eV for 6.25%, and 0.600 eV for 9.375% Bi, respectively. We have also shown the strain of InGaNBi on GaN; it indicates that through adjusting In and Bi compositions, InGaNBi can be designed on GaN with an acceptable strain.
Subject headings
- NATURVETENSKAP -- Fysik -- Annan fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Other Physics Topics (hsv//eng)
- NATURVETENSKAP -- Kemi -- Teoretisk kemi (hsv//swe)
- NATURAL SCIENCES -- Chemical Sciences -- Theoretical Chemistry (hsv//eng)
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- Electronic
- InGaNBi
- Quaternary
- Strain
- First-principles
Publication and Content Type
- art (subject category)
- ref (subject category)
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