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Symmetrical Large-Signal Modeling of Microwave Switch FETs
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- Prasad, Ankur, 1987 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Fager, Christian, 1974 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Thorsell, Mattias, 1982 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- (creator_code:org_t)
- Institute of Electrical and Electronics Engineers (IEEE), 2014
- 2014
- English.
- In: IEEE Transactions on Microwave Theory and Techniques. - : Institute of Electrical and Electronics Engineers (IEEE). - 0018-9480 .- 1557-9670. ; 62:8, s. 1590-1598
- Journal article (peer-reviewed)
Abstract
Subject headings
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- This paper presents a new symmetrical field-effect transistor (FET) model suitable for microwave switches. The model takes advantage of the inherent symmetry of typical switch devices, justifying a new small-signal model where all intrinsic model parameters can be mirrored between the positive and negative drain-source bias regions. This small-signal model is utilized in a new and simplified approach to large-signal modeling of these type of devices. It is shown that the proposed large-signal model only needs a single charge expression to model all intrinsic capacitances. For validation of the proposed model, small-signal measurements from 100 MHz to 50 GHz and large-signal measurements at 600 MHz and 16 GHz, are carried out on a GaAs pHEMT. Good agreement between the model and the measurements is observed under both small-and large-signal conditions with particularly accurate prediction of higher harmonic content. The reduced measurement requirements and complexity of the symmetrical model demonstrates its advantages. Further, supporting operation in the negative drain-source voltage region, the model is robust and applicable to a variety of circuits, e. g., switches, resistive mixers, oscillators, etc.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- GaAs
- semiconductor device modeling
- Field-effect transistors (FETs)
- small-signal model
- symmetrical model
- HEMTs
- large-signal model
- modeling
- microwave switch
Publication and Content Type
- art (subject category)
- ref (subject category)
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