SPFM pre-cleaning for formation of silicon interfaces by wafer bonding

• The use of H2SO4-H2O2-HF (SPFM) at low HF concentrations (10 to 1000 ppm) has been investigated as the preparation procedure prior to formation of Si-Si interfaces by wafer bonding. The SPFM cleaning process makes it possible to form a hydrophilic (OH terminated) silicon surface, thereby achieving a spontaneous and strong room temperature bond. Electrical characterization using current vs. voltage and spreading resistance measurements shows that this cleaning procedure can be used to form Si-Si junctions with excellent electrical properties. Some of the problems related to hydrophobic wafer bonding can thus be circumvented by the proposed technique

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

integrated circuit technology

wafer bonding

silicon

surface cleaning

elemental semiconductors

integrated circuit testing

electric current

semiconductor junctions

electric resistance

Publication and Content Type

kon (subject category)

ref (subject category)