SwePub
Sök i LIBRIS databas

  Extended search

onr:"swepub:oai:research.chalmers.se:2bea5a94-8454-4fae-b207-96aebe75d587"
 

Search: onr:"swepub:oai:research.chalmers.se:2bea5a94-8454-4fae-b207-96aebe75d587" > Analysis of Lateral...

  • 1 of 1
  • Previous record
  • Next record
  •    To hitlist

Analysis of Lateral Thermal Coupling for GaN MMIC Technologies

Bremer, Johan, 1991 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Bergsten, Johan, 1988 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Hanning, Lowisa, 1993 (author)
Chalmers tekniska högskola,Chalmers University of Technology
show more...
Nilsson, Torbjörn, 1962 (author)
Saab AB,Saab
Rorsman, Niklas, 1964 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Gustafsson, Sebastian, 1990 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Eriksson, Martin, 1989 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Thorsell, Mattias, 1982 (author)
Chalmers tekniska högskola,Chalmers University of Technology
show less...
 (creator_code:org_t)
2018
2018
English.
In: IEEE Transactions on Microwave Theory and Techniques. - 0018-9480 .- 1557-9670. ; 66:10, s. 4430-4438
  • Journal article (peer-reviewed)
Abstract Subject headings
Close  
  • This paper presents a study of the lateral heat propagation in an aluminum gallium nitride/gallium nitride (AlGaN/GaN) heterostructure grown on a silicon carbide substrate. The study is enabled by the design of a temperature sensor that utilizes the temperature-dependent I-V characteristic of a semiconductor resistor, making it suitable for integration in GaN monolithic microwave integrated circuit technologies. Using the sensor, we are able to characterize the thermal transient response and extract lateral thermal time constants from the measurements. Time constants in the range from 25 mu s to 1.2 ms are identified. Furthermore, the heat propagation properties are characterized for heat source-to-sensor distances of 86-484 mu m, resulting in delay times from 3.5 to 111 mu s. It is shown that both the time constants and propagation delay increase with temperature. An empirical model of the sensor current versus temperature and voltage is proposed and used to predict the junction temperature of the sensor. The study provides knowledge for heat management design and proposes an integrated temperature measurement solution for future highly integrated GaN applications.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Maskinteknik -- Energiteknik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Mechanical Engineering -- Energy Engineering (hsv//eng)
TEKNIK OCH TEKNOLOGIER  -- Annan teknik -- Övrig annan teknik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Other Engineering and Technologies -- Other Engineering and Technologies not elsewhere specified (hsv//eng)
TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

heat spread
lateral coupling
Gallium nitride (GaN)
semiconductor resistor
thermal sensors

Publication and Content Type

art (subject category)
ref (subject category)

Find in a library

To the university's database

  • 1 of 1
  • Previous record
  • Next record
  •    To hitlist

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.

 
pil uppåt Close

Copy and save the link in order to return to this view