Search: onr:"swepub:oai:research.chalmers.se:37acd2ae-d1e5-4f3f-acb3-8f47ded483a9" >
Interface defects i...
Interface defects in HfO2, LaSiOx and Gd2O3 high-k/metal gate structures on silicon: Energy distribution and passivation
- Article/chapterEnglish2007
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LIBRIS-ID:oai:research.chalmers.se:37acd2ae-d1e5-4f3f-acb3-8f47ded483a9
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https://research.chalmers.se/publication/67390URI
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Subject category:kon swepub-publicationtype
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Subject category:ref swepub-contenttype
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Cherkaoui, K.
(author)
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O'Connor, E
(author)
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Groenland, A.W.
(author)
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Lemme, M.C.
(author)
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Gottlob, H.D.B.
(author)
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Schmidt, M
(author)
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Hall, S.
(author)
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Lu, Y.
(author)
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Buiu, O.
(author)
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Raeissi, Bahman,1979Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)raeissin
(author)
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Piscator, Johan,1977Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)e8johanp
(author)
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Engström, Olof,1943Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)oleng
(author)
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Chalmers tekniska högskola
(creator_code:org_t)
Related titles
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In:Proc. Electrochemical Society Meeting, Washington DC, October 2007
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To the university's database
- By the author/editor
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Hurley, P.K.
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Cherkaoui, K.
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O'Connor, E
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Groenland, A.W.
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Lemme, M.C.
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Gottlob, H.D.B.
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show more...
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Schmidt, M
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Hall, S.
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Lu, Y.
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Buiu, O.
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Raeissi, Bahman, ...
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Piscator, Johan, ...
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Engström, Olof, ...
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- About the subject
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- ENGINEERING AND TECHNOLOGY
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ENGINEERING AND ...
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and Other Engineerin ...
- Articles in the publication
- Proc. Electroche ...
- By the university
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Chalmers University of Technology