Carbon-Nanotube Through-Silicon Via Interconnects for Three-Dimensional Integration

• Interconnection of carbon-nanotube (CNT)-filled through-silicon vias is demonstrated through an easy-to-implement process based on mechanical fastening. Direct CNT-to-CNT and CNT-to-Au contacts are realized at the microscale, and their specific contact resistances extracted from electrical measurements are approximately 1.2 × 10 -3 Ω cm 2 and 4.5 × 10 -4 Ω cm 2 , respectively. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Publication and Content Type

art (subject category)

ref (subject category)