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Heterostructure Barrier Varactor Multipliers

Dillner, Lars, 1968 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Ingvarson, Mattias, 1974 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Kollberg, Erik, 1937 (author)
Chalmers tekniska högskola,Chalmers University of Technology
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Stake, Jan, 1971 (author)
Chalmers tekniska högskola,Chalmers University of Technology
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 (creator_code:org_t)
ISBN 0862132223
2000
2000
English.
In: GAAS 2000. - 0862132223 ; 1, s. 197-200
  • Conference paper (peer-reviewed)
Abstract Subject headings
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  • The Heterostructure Barrier Varactor (HBV) diode and its application in frequency multipliers is reviewed. Different material systems and HBV models are described. Multiplier performance versus diode parameters and some practical multiplier designs are discussed as well. The best result until now is an efficiency of 12% and an output power of 9 mW at an output frequency of 250 GHz.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

HBV
varactors

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kon (subject category)
ref (subject category)

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Dillner, Lars, 1 ...
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Stake, Jan, 1971
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ENGINEERING AND TECHNOLOGY
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