On the Large Signal Evaluation and Modeling of GaN FET

• The large signal performance and model for GaN FET devices was evaluated with DC, S-parameters, and large signal measurements. The large signal model was extended with bias and temperature dependence of access resistances, modified capacitance and charge equations, as well as breakdown models. The model was implemented in a commercial CAD tool and exhibits good overall accuracy.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

resistance

mesfet model

frequency-dependence

small signal and large signal models

FET

equivalent-circuit

hfets

GaN

Publication and Content Type

art (subject category)

ref (subject category)