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Electron traps at H...
Electron traps at HfO2/SiOx interfaces
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- Raeissi, Bahman, 1979 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Chen, Yang Yin (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Piscator, Johan, 1977 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Lai, Zonghe, 1948 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Engström, Olof, 1943 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- ISBN 9781424423637
- 2008
- 2008
- English.
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In: Proceeding of 38th European Solid-State Device Research Conference (ESSDERC 2008), Edinburgh, Scotland, UK. - 1930-8876. - 9781424423637 ; , s. 130-133
- Related links:
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Abstract
Subject headings
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- Electron traps in HfO2 have been investigated by measuring thermally stimulated current (TSC). Two different interface regions have been identified where captured electrons interact with energy band states. The two domains are separated by and close to the “interlayer” of SiOx commonly present in high-k/silicon stacks. On the inner side, between SiOx and silicon, we find an irregular silicon crystal which we interpret as a source for interface states. At the SiOx/HfO2 interface, we find a high concentration of unstable traps with a strong influence on the electric field distribution in the gate stack.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Materialteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Materials Engineering (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Annan teknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Other Engineering and Technologies (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
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- kon (subject category)
- ref (subject category)
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