Electronic and magnetic properties of vanadium doped AlN nanosheet under in-plane biaxial strains

• First-principles calculations have been performed to investigate the electronic and magnetic properties of V-doped AlN nanosheet under in-plane biaxial strains. It is found that V atom favors to substitute for Al site with the lowest formation energy. The magnetic coupling of three different configurations are studied and configuration I is demonstrated to possess room temperature ferromagnetism. The stable ferromagnetic coupling is mediated by double exchange mechanism. In addition, the in-plane biaxial strains corresponding to tensile and compressive strains can affect and manipulate the magnetic interaction of V-doped AlN nanosheet in different ways. These results are conductive to design AlN based two dimensional diluted magnetic semiconductors.

Subject headings

NATURVETENSKAP  -- Fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

Keyword

Biaxial strains

ZNO

CR

1ST-PRINCIPLES

First-principles

Magnetic properties

AlN nanosheet

Spintronic

Publication and Content Type

art (subject category)

ref (subject category)