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Bismuth incorporati...
Bismuth incorporation and lattice contraction in GaSbBi and InSbBi
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- Wang, Shu Min, 1963 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Song, Yuxin, 1981 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Roy, Ivy Saha (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- ISBN 9781457708800
- 2011
- 2011
- English.
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In: 13th International Conference on Transparent Optical Networks, ICTON 2011, Stockholm, 26-30 June 2011. - 2162-7339. - 9781457708800
- Related links:
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http://dx.doi.org/10...
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Abstract
Subject headings
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- III-V-Bi compounds have received considerable attention recently due to a number of interesting material properties. For example, adding a small amount of Bi atoms in conventional III-Vs leads to a large bandgap reduction that occurs predominately in the valence band, about 88 meV/%Bi in GaAsBi. The Bi incorporation affects only the valence band structures and has little influence on electrons. Compared with dilute nitrides, the electron mobility of dilute GaAsBi is much less affected and photoluminescence intensity increases with the Bi incorporation. Dilute GaAsBi also introduces a large spin-orbit split and it has been suggested to use this property to suppress Auger recombination for 1.55 μm lasers on GaAs [1]. So far most experimental studies have been focused on growth of GaAsBi [2], but very little on GaSbBi and InSbBi. Here we report growth of dilute GaSbBi and InSbBi using molecular beam epitaxy (MBE). We have optimized growth conditions aiming at achieving maximum Bi incorporation. Surprisingly X-ray diffraction (XRD) revealed lattice contraction in GaSbBi and InSbBi although Bi atoms have a large atomic radius.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- Atomic radius
- GaAs
- Nitrides
- Molecular beam epitaxy
- Band gap reduction
- Photoluminescence intensities
- Bismuth compounds
- Material property
- Experimental studies
- Atoms
- X ray diffraction
- Spin orbits
- Molecular beams
- Bismuth
- Transparent optical networks
- Fiber optic networks
- Lattice contraction
- Dilute nitrides
- Auger recombination
- Electron mobility
- Growth conditions
Publication and Content Type
- kon (subject category)
- ref (subject category)
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