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20 GHz Power Amplif...
20 GHz Power Amplifier Design in 130 nm CMOS
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- Ferndahl, Mattias, 1973 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Johansson, T. (author)
- Huawei Technologies Co Ltd
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- Zirath, Herbert, 1955 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- ISBN 9782874870071
- 2008
- 2008
- English.
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In: 2008 European Microwave Integrated Circuit Conference, EuMIC 2008; Amsterdam; Netherlands; 27 October 2008 through 31 October 2008. - 9782874870071 ; , s. 254-257
- Related links:
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http://dx.doi.org/10...
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https://doi.org/10.1...
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Abstract
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- Five different 20 GHz power amplifiers in 130 nm CMOS technology have been designed and characterized. The power amplifiers explore single versus cascode configuration, smaller versus larger transistor sizes, as well as the combination of two amplifiers using power splitters/combiners. A maximum output power of 63 mW at 20 GHz was achieved. Transistor level characterization using load pull measurements on 1 mm gate width transistors yielded 148 mW output power. These numbers are, to the authors? knowledge, the highest reported for CMOS above 10 GHz. Transistor modeling and layout for power amplifiers are also discussed.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
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- ref (subject category)
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