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Direct Chemical Vap...
Direct Chemical Vapor Deposition of Large-Area Carbon Thin Films on Gallium Nitride for Transparent Electrodes: A First Attempt
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- Sun, Jie, 1977 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Cole, M. T. (author)
- University Of Cambridge
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- Ahmad, S. Awais (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Bäcke, Olof, 1984 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Ive, Tommy, 1968 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Löffler, Markus, 1980 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Lindvall, Niclas, 1985 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Olsson, Eva, 1960 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Teo, K. B. K. (author)
- Aixtron Limited
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- Liu, Johan, 1960 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Larsson, Anders, 1957 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Yurgens, Avgust, 1959 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Haglund, Åsa, 1976 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- Institute of Electrical and Electronics Engineers (IEEE), 2012
- 2012
- English.
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In: IEEE Transactions on Semiconductor Manufacturing. - : Institute of Electrical and Electronics Engineers (IEEE). - 0894-6507 .- 1558-2345. ; 25:3, s. 494-501
- Related links:
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http://dx.doi.org/10...
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https://doi.org/10.1...
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Abstract
Subject headings
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- Direct formation of large-area carbon thin films on gallium nitride by chemical vapor deposition without metallic catalysts is demonstrated. A high flow of ammonia is used to stabilize the surface of the GaN (0001)/sapphire substrate during the deposition at 950 degrees C. Various characterization methods verify that the synthesized thin films are largely sp(2) bonded, macroscopically uniform, and electrically conducting. The carbon thin films possess optical transparencies comparable to that of exfoliated graphene. This paper offers a viable route toward the use of carbon-based materials for future transparent electrodes in III-nitride optoelectronics, such as GaN-based light emitting diodes and laser diodes.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- chemical vapour deposition
- ammonia
- transparent electrodes
- III-V semiconductors
- Chemical vapor deposition
- GaN
- graphene
Publication and Content Type
- art (subject category)
- ref (subject category)
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- By the author/editor
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Sun, Jie, 1977
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Cole, M. T.
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Ahmad, S. Awais
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Bäcke, Olof, 198 ...
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Ive, Tommy, 1968
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Löffler, Markus, ...
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show more...
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Lindvall, Niclas ...
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Olsson, Eva, 196 ...
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Teo, K. B. K.
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Liu, Johan, 1960
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Larsson, Anders, ...
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Yurgens, Avgust, ...
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Haglund, Åsa, 19 ...
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show less...
- About the subject
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- ENGINEERING AND TECHNOLOGY
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ENGINEERING AND ...
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and Electrical Engin ...
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and Other Electrical ...
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IEEE Transaction ...
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Chalmers University of Technology