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Direct Chemical Vapor Deposition of Large-Area Carbon Thin Films on Gallium Nitride for Transparent Electrodes: A First Attempt

Sun, Jie, 1977 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Cole, M. T. (author)
University Of Cambridge
Ahmad, S. Awais (author)
Chalmers tekniska högskola,Chalmers University of Technology
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Bäcke, Olof, 1984 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Ive, Tommy, 1968 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Löffler, Markus, 1980 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Lindvall, Niclas, 1985 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Olsson, Eva, 1960 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Teo, K. B. K. (author)
Aixtron Limited
Liu, Johan, 1960 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Larsson, Anders, 1957 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Yurgens, Avgust, 1959 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Haglund, Åsa, 1976 (author)
Chalmers tekniska högskola,Chalmers University of Technology
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 (creator_code:org_t)
Institute of Electrical and Electronics Engineers (IEEE), 2012
2012
English.
In: IEEE Transactions on Semiconductor Manufacturing. - : Institute of Electrical and Electronics Engineers (IEEE). - 0894-6507 .- 1558-2345. ; 25:3, s. 494-501
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • Direct formation of large-area carbon thin films on gallium nitride by chemical vapor deposition without metallic catalysts is demonstrated. A high flow of ammonia is used to stabilize the surface of the GaN (0001)/sapphire substrate during the deposition at 950 degrees C. Various characterization methods verify that the synthesized thin films are largely sp(2) bonded, macroscopically uniform, and electrically conducting. The carbon thin films possess optical transparencies comparable to that of exfoliated graphene. This paper offers a viable route toward the use of carbon-based materials for future transparent electrodes in III-nitride optoelectronics, such as GaN-based light emitting diodes and laser diodes.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

chemical vapour deposition
ammonia
transparent electrodes
III-V semiconductors
Chemical vapor deposition
GaN
graphene

Publication and Content Type

art (subject category)
ref (subject category)

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