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Vertically aligned ...
Vertically aligned CNT-Cu nano-composite material for stacked through-silicon-via interconnects
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- Sun, Shuangxi, 1986 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Mu, Wei, 1985 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Edwards, Michael, 1986 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Mencarelli, Davide (author)
- Universita Politecnica Delle Marche,Marche Polytechnic University
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- Pierantoni, Luca (author)
- Universita Politecnica Delle Marche,Marche Polytechnic University
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- Fu, Yifeng, 1984 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Jeppson, Kjell, 1947 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Liu, Johan, 1960 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- 2016-07-07
- 2016
- English.
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In: Nanotechnology. - : IOP Publishing. - 1361-6528 .- 0957-4484. ; 27:33, s. Art no335705-
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http://dx.doi.org/10...
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Abstract
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- For future miniaturization of electronic systems using 3D chip stacking, new fine-pitch materials for through-silicon-via (TSV) applications are likely required. In this paper, we propose a novel carbon nanotube (CNT)/copper nanocomposite material consisting of high aspect ratio, vertically aligned CNT bundles coated with copper. These bundles, consisting of hundreds of tiny CNTs, were uniformly coated by copper through electroplating, and aspect ratios as high as 300: 1 were obtained. The resistivity of this nanomaterial was found to be as low as similar to 10(-8) Omega m, which is of the same order of magnitude as the resistivity of copper, and its temperature coefficient was found to be only half of that of pure copper. The main advantage of the composite TSV nanomaterial is that its coefficient of thermal expansion (CTE) is similar to that of silicon, a key reliability factor. A finite element model was set up to demonstrate the reliability of this composite material and thermal cycle simulations predicted very promising results. In conclusion, this composite nanomaterial appears to be a very promising material for future 3D TSV applications offering both a low resistivity and a low CTE similar to that of silicon.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Materialteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Materials Engineering (hsv//eng)
Keyword
- CNT-Cu
- nanocomposite
- TSV
- 3D-IC
Publication and Content Type
- art (subject category)
- ref (subject category)
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- By the author/editor
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Sun, Shuangxi, 1 ...
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Mu, Wei, 1985
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Edwards, Michael ...
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Mencarelli, Davi ...
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Pierantoni, Luca
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Fu, Yifeng, 1984
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show more...
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Jeppson, Kjell, ...
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Liu, Johan, 1960
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show less...
- About the subject
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- ENGINEERING AND TECHNOLOGY
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ENGINEERING AND ...
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and Materials Engine ...
- Articles in the publication
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Nanotechnology
- By the university
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Chalmers University of Technology