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Threading Dislocati...
Threading Dislocation Blocking by Dilute Nitrides in Metamorphic Structures on GaAs Grown by MBE
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- Song, Yuxin, 1981 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Wang, Shu Min, 1963 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Lai, Zonghe, 1948 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Sadeghi, Mahdad, 1964 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- 2010
- 2010
- English.
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In: 16th International Conference on Molecular Beam Epitaxy.
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Abstract
Subject headings
Close
- Threading dislocation blocking by incorporating nitrogen in metamorphic InGaAs buffers on GaAs grown by MBE is demonstrated. This results in large enhancement of photoluminescence intensity from the metamorphic quantum wells.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Telekommunikation (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Telecommunications (hsv//eng)
Keyword
- threading dislocation
- metamorphic
- dilute nitride
Publication and Content Type
- kon (subject category)
- ref (subject category)
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