Enhanced high-frequency performance of top-gated graphene FETs due to substrate-induced improvements in charge carrier saturation velocity

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Fältnamn	Indikatorer	Metadata
000		04324naa a2200481 4500
001		oai:research.chalmers.se:614bbdf3-ed16-4c69-b341-125dd075a8ef
003		SwePub
008		201218s2021 \| \|\|\|\|\|\|\|\|\|\|\|000 \|\|eng\|
024	7	a https://research.chalmers.se/publication/5221502 URI
024	7	a https://doi.org/10.1109/TED.2020.30461722 DOI
024	7	a https://research.chalmers.se/publication/5210602 URI
040		a (SwePub)cth
041		a engb eng
042		9 SwePub
072	7	a art2 swepub-publicationtype
072	7	a ref2 swepub-contenttype
100	1	a Asad, Muhammad,d 1986u Chalmers tekniska högskola,Chalmers University of Technology4 aut0 (Swepub:cth)asadmu
245	1 0	a Enhanced high-frequency performance of top-gated graphene FETs due to substrate-induced improvements in charge carrier saturation velocity
264	1	c 2021
338		a electronic2 rdacarrier
520		a High-frequency performance of top-gated graphene field-effect transistors (GFETs) depends to a large extent on the saturation velocity of the charge car-riers, a velocity limited by inelastic scattering by surface optical phonons from the dielectrics surrounding the chan-nel. In this work, we show that by simply changing the graphene channel surrounding dielectric with a material having higher optical phonon energy, one could improve the transit frequency and maximum frequency of oscillation of GFETs. We fabricated GFETs on conventional SiO2/Si substrates by adding a thin Al2O3 interfacial buffer layer on top of SiO2/Si substrates, a material with about 30% higher optical phonon energy than that of SiO2, and compared performance with that of GFETs fabricated without adding the interfacial layer. From S-parameter measurements, a transit frequency and a maximum frequency of oscillation of 43 GHz and 46 GHz, respectively, were obtained for GFETs on Al2O3 with 0.5 µm gate length. These values are approximately 30% higher than those for state-of-the-art GFETs of the same gate length on SiO2. For relating the improvement of GFET high-frequency performance to improvements in the charge carrier saturation velocity, we used standard methods to extract the charge carrier veloc-ity from the channel transit time. A comparison between two sets of GFETs with and without the interfacial Al2O3 layer showed that the charge carrier saturation velocity had increased to 2·10^7 cm/s from 1.5·10^7 cm/s.
650	7	a TEKNIK OCH TEKNOLOGIERx Elektroteknik och elektronik0 (SwePub)2022 hsv//swe
650	7	a ENGINEERING AND TECHNOLOGYx Electrical Engineering, Electronic Engineering, Information Engineering0 (SwePub)2022 hsv//eng
650	7	a TEKNIK OCH TEKNOLOGIERx Nanoteknik0 (SwePub)2102 hsv//swe
650	7	a ENGINEERING AND TECHNOLOGYx Nano-technology0 (SwePub)2102 hsv//eng
650	7	a TEKNIK OCH TEKNOLOGIERx Elektroteknik och elektronikx Annan elektroteknik och elektronik0 (SwePub)202992 hsv//swe
650	7	a ENGINEERING AND TECHNOLOGYx Electrical Engineering, Electronic Engineering, Information Engineeringx Other Electrical Engineering, Electronic Engineering, Information Engineering0 (SwePub)202992 hsv//eng
653		a graphene
653		a maximum frequency of oscillation
653		a Field-effect transistors (FETs)
653		a transit frequency
653		a optical phonons
653		a saturation velocity
700	1	a Jeppson, Kjell,d 1947u Chalmers tekniska högskola,Chalmers University of Technology4 aut0 (Swepub:cth)jeppson
700	1	a Vorobiev, Andrei,d 1963u Chalmers tekniska högskola,Chalmers University of Technology4 aut0 (Swepub:cth)vorobiev
700	1	a Bonmann, Marlene,d 1988u Chalmers tekniska högskola,Chalmers University of Technology4 aut0 (Swepub:cth)marbonm
700	1	a Stake, Jan,d 1971u Chalmers tekniska högskola,Chalmers University of Technology4 aut0 (Swepub:cth)stake
710	2	a Chalmers tekniska högskola4 org
773	0	t IEEE Transactions on Electron Devicesg 68:2, s. 899-902q 68:2<899-902x 1557-9646x 0018-9383
856	4	u https://research.chalmers.se/publication/522150/file/522150_Fulltext.pdfx primaryx freey FULLTEXT
856	4 8	u https://research.chalmers.se/publication/522150
856	4 8	u https://doi.org/10.1109/TED.2020.3046172
856	4 8	u https://research.chalmers.se/publication/521060

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