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- Qin, HaihongNanjing University of Aeronautics and Astronautics (author)
Evaluation and Suppression Method of Turn-off Current Spike for SiC/Si Hybrid Switch
- Article/chapterEnglish2023
Publisher, publication year, extent ...
- 2023
- electronicrdacarrier
Numbers
- LIBRIS-ID:oai:research.chalmers.se:66b82ff9-08d0-4884-b4ae-ad8ce836adfc
- https://research.chalmers.se/publication/534955URI
- https://doi.org/10.1109/ACCESS.2023.3251397DOI
Supplementary language notes
- Language:English
- Summary in:English
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- SwePubSwePub
Classification
Notes
- SiC MOSFET/Si IGBT (SiC/Si) hybrid switch usually selects the gate control pattern that SiC MOSFET turns on earlier and turns off later than Si IGBT, with the aim of making the hybrid switch show excellent switching characteristics of SiC MOSFET and reduce switching loss. However, when SiC MOSFET turns off, the fast slew rate of drain source voltage causes the current spike in Si IGBT due to the effects of parasitic capacitance charging and carrier recombination, which will produce additional turn-off loss, thus affecting the overall efficiency and temperature rise of the converter. Based on the double pulse test circuit of SiC/Si hybrid switch, the mathematical model of the turn-off transient process is established. The effects of the remnant carrier recombination degree of Si IGBT, the turn-off speed of SiC MOSFET and the working conditions on the turn-off current spike of hybrid switch are evaluated. Although adjusting these parameters can reduce the turn-off current spike somewhat, additional losses will be introduced. Therefore, a new method to suppress the turn-off current spike is proposed to balance the power loss and current stress.
Subject headings and genre
- TEKNIK OCH TEKNOLOGIER Maskinteknik Energiteknik hsv//swe
- ENGINEERING AND TECHNOLOGY Mechanical Engineering Energy Engineering hsv//eng
- TEKNIK OCH TEKNOLOGIER Maskinteknik Farkostteknik hsv//swe
- ENGINEERING AND TECHNOLOGY Mechanical Engineering Vehicle Engineering hsv//eng
- TEKNIK OCH TEKNOLOGIER Elektroteknik och elektronik Annan elektroteknik och elektronik hsv//swe
- ENGINEERING AND TECHNOLOGY Electrical Engineering, Electronic Engineering, Information Engineering Other Electrical Engineering, Electronic Engineering, Information Engineering hsv//eng
- MOSFET
- current spike
- Switches
- suppression method
- Delays
- hybrid switch
- SiC MOSFET/Si IGBT
- Insulated gate bipolar transistors
- Logic gates
- Silicon carbide
- Silicon
Added entries (persons, corporate bodies, meetings, titles ...)
- Xie, SixuanNanjing University of Aeronautics and Astronautics (author)
- Ba, ZhenhuaNanjing University of Aeronautics and Astronautics (author)
- Liu, XiangNanjing University of Aeronautics and Astronautics (author)
- Chen, WenmingNanjing University of Aeronautics and Astronautics (author)
- Fu, DafengNanjing University of Aeronautics and Astronautics (author)
- Xun, Qian,1990Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)qianx (author)
- Nanjing University of Aeronautics and AstronauticsChalmers tekniska högskola (creator_code:org_t)
Related titles
- In:IEEE Access11, s. 26832-268422169-35362169-3536
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