Metamorphic InGaAs telecom lasers on GaAs

• We demonstrate GaAs-based metamorphic lasers in the 1.3-1.55 μm telecom range grown by molecular beam epitaxy.The introduction of dopants in a compositionally graded layer is shown to significantly influence material properties, aswell as having impact on the laser device design. Investigating and understanding of strain relaxation and dislocationdynamics is useful for improving material quality, performance and robustness of metamorphic devices. We demonstratepulsed lasing up to 1.58 μm and continuous wave lasing at 1.3 μm at room temperature with low threshold currents.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

Metamorphic

compositionally graded buffer layer

InGaAs

quantum well

GaAs

molecular beam epitaxy

telecom laser

Publication and Content Type

kon (subject category)

ref (subject category)