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- Räisänen, Antti (author)
A single barrier varactor quintupler at 170 GHz
- Article/chapterEnglish1995
Publisher, publication year, extent ...
- Institute of Electrical and Electronics Engineers (IEEE),1995
Numbers
- LIBRIS-ID:oai:research.chalmers.se:6cd34c51-1e15-4497-9902-db5d5d665a44
- https://research.chalmers.se/publication/62444URI
- https://doi.org/10.1109/22.372117DOI
Supplementary language notes
- Language:English
- Summary in:English
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Classification
Notes
- InGaAs-InAlAs single-barrier varactor (SBV) diodes are tested as frequency quintuplers. The diodes were tested in a crossed-waveguide structure and provided output frequencies between 148 and 187 GHz. The highest observed flange-to-flange efficiency was 0.78% at an output frequency of 172 GHz. This is nearly four times greater than the best quintupler efficiency obtained for previous SBV varactors made from the GaAs-AlGaAs materials system.
Subject headings and genre
- TEKNIK OCH TEKNOLOGIER Elektroteknik och elektronik hsv//swe
- ENGINEERING AND TECHNOLOGY Electrical Engineering, Electronic Engineering, Information Engineering hsv//eng
- frequency multiplier
- quintupler
- QBV
- harmonic generation
- terahertz sources
- HBV
- SBV
- varactors
Added entries (persons, corporate bodies, meetings, titles ...)
- Tolmunen, Timo J. (author)
- Natzic, Mark (author)
- Frerking, Margaret (author)
- Brown, Elliott (author)
- Grönqvist, Hans,1958Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)hansgron (author)
- Nilsen, Svein M.,1956Chalmers tekniska högskola,Chalmers University of Technology (author)
- Chalmers tekniska högskola (creator_code:org_t)
Related titles
- In:IEEE Transactions on Microwave Theory and Techniques: Institute of Electrical and Electronics Engineers (IEEE)43:3, s. 685-6880018-94801557-9670
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