Flip-chip assembled 7 GHz ultra-low phase-noise InGaP HBT oscillator

• This paper reports on a flip-chip assembled 7 GHz ultra-low phase-noise GaAs InGaP heterojunction bipolar transistor (HBT) monolithic microwave integrated circuit (MMIC) oscillator. The cross-coupled oscillator was flip-chip bonded to an in-house fabricated Al2O3 carrier with patterns optimized for low-loss transitions. After flip-chip, the phase noise of the crosscoupled InGaP HBT oscillator was improved due to an increased Q-factor of the resonant tank. An ultra-low phase-noise of -112 dBc/Hz @ 100 kHz offset and -128 dBc/Hz @ 1 MHz offset with a high output power of 7 dBm at 7 GHz was achieved. To our best knowledge, this is the lowest phase noise reported for a flip-chip assembled oscillator.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

Cross-coupled oscillators

Flip chip

Microwaves

Interconnection

Microwave

Monolithic microwave integrated circuits

Semiconductor device manufacture

High output power

Cross-coupled

Resonant tanks

Heterojunction bipolar transistors

MMIC

InGaP heterojunction bipolar transistors (HBT)

Phase noise

Flip-chip

Oscillator

Microwave oscillators

Flip chip devices

Monolithic microwave integrated circuit oscillators

Oscillators (electronic)

Publication and Content Type

kon (subject category)

ref (subject category)