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Waveforms-based large-signal identification of transistor models
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- Avolio, G. (author)
- Katholieke Universiteit Leuven
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- Schreurs, D. (author)
- Katholieke Universiteit Leuven
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- Raffo, A. (author)
- University of Ferrara
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- (creator_code:org_t)
- ISBN 9781467310871
- 2012
- 2012
- English.
- In: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781467310871
- Conference paper (peer-reviewed)
Abstract
Subject headings
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- Measurements of low-and high-frequency vector-calibrated large-signal waveforms are exploited in this work to identify the parameters of a FET nonlinear model. The I DS nonlinear current source and the nonlinear charge sources' parameters are respectively determined from a small set of low-(2 MHz) and high-frequency (8 GHz) load-pull measurements by using a least square numerical optimization. Under low-frequency operation the contribution of the charge sources and any other reactive element can be neglected. In this way the identification of the IDS parameters is more accurate while remarkably speeding up the optimization routine as well. The proposed procedure is quite general and can be applied to different types of active devices. As case study, a 0.25-μm GaAs pHEMT is considered and the extracted model is validated under conditions different than the ones exploited within the identification step. A very good agreement between model predictions and experimental data is achieved.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- Numerical optimization
- Large-signal measurements
- Transistor nonlinear models
Publication and Content Type
- kon (subject category)
- ref (subject category)
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- Nauwelaers, B.
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- Chalmers University of Technology
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