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Electrical characte...
Electrical characterization of bonding interfaces
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- Engström, Olof, 1943 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Bengtsson, Stefan, 1961 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- 1992
- 1992
- English.
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In: Proceedings of the First International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications. ; , s. 295-
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Abstract
Subject headings
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- An overview is given on measurement techniques and results obtained for the characterization of bonded Si-Si, Si-SiO2 and SiO2-SiO2 interfaces. The electrical properties of Si-Si interfaces are found to be very similar to those of grain boundaries, which suggests a model where the current across the interface is limited by a potential barrier determined by charge carriers captures into electron states at the bonded interface. From current-voltage and capacitance-voltage measurements, the interface charge and its energy distribution can be determined. For bonded Si-SiO2 interfaces, energy states distributions are obtained by capacitance voltage technique with midgap densities in the region at or above 5 1010 eV-1 cm-2. Interfaces between two bonded SiO2 layers exhibit an increased concentration of electron traps
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- metal-insulator-semiconductor structures
- electron traps
- elemental semiconductors
- wafer bonding
- semiconductor junctions
- electronic density of states
- semiconductor-insulator boundaries
- silicon compounds
- interface electron states
- adhesion
- silicon
Publication and Content Type
- kon (subject category)
- ref (subject category)
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