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A Radio Frequency S...
A Radio Frequency Single-Electron Transistor Based on an InAs/InP Heterostructure Nanowire
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- Nilsson, Henrik (author)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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- Duty, Tim, 1963 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Abay, Simon, 1980 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Wilson, Christopher, 1974 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Wagner, Jakob (author)
- Lund University,Lunds universitet,Centrum för analys och syntes,Kemiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Centre for Analysis and Synthesis,Department of Chemistry,Departments at LTH,Faculty of Engineering, LTH
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- Thelander, Claes (author)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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- Delsing, Per, 1959 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Samuelson, Lars (author)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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Wilson, Chris (author)
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(creator_code:org_t)
- 2008-02-27
- 2008
- English.
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In: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 8:3, s. 872-875
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Abstract
Subject headings
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- We demonstrate radio frequency single-electron transistors fabricated from epitaxially grown InAs/InP heterostructure nanowires. Two sets of double-barrier wires with different barrier thicknesses were grown. The wires were suspended 15 nm above a metal gate electrode. Electrical measurements on a high-resistance nanowire showed regularly spaced Coulomb oscillations at a gate voltage from - 0.5 to at least 1.8 V. The charge sensitivity was measured to 32 mu e(rms) Hz (- 1/2) at 1.5 K. A low-resistance single-electron transistor showed regularly spaced oscillations only in a small gate-voltage region just before carrier depletion. This device had a charge sensitivity of 2.5 mu e(rms) Hz (- 1/2). At low frequencies this device showed a typical 1/f noise behavior, with a level extrapolated to 300 mu e(rms) Hz (- 1/2) at 10 Hz.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology -- Nano-technology (hsv//eng)
Publication and Content Type
- art (subject category)
- ref (subject category)
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- By the author/editor
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Nilsson, Henrik
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Duty, Tim, 1963
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Abay, Simon, 198 ...
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Wilson, Christop ...
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Wagner, Jakob
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Thelander, Claes
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show more...
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Delsing, Per, 19 ...
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Samuelson, Lars
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Wilson, Chris
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- About the subject
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- NATURAL SCIENCES
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NATURAL SCIENCES
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and Physical Science ...
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and Condensed Matter ...
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- ENGINEERING AND TECHNOLOGY
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ENGINEERING AND ...
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and Nano technology
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and Nano technology
- Articles in the publication
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Nano Letters
- By the university
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Chalmers University of Technology
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Lund University