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AlGaN/GaN high elec...
AlGaN/GaN high electron mobility transistors with intentionally doped GaN buffer using propane as carbon precursor
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- Bergsten, Johan, 1988 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Li, X. (author)
- Linköpings universitet,Linköping University
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- Nilsson, Daniel (author)
- Linköpings universitet,Linköping University
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- Danielsson, O. (author)
- Linköpings universitet,Linköping University
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- Pedersen, H. (author)
- Linköpings universitet,Linköping University
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- Janzen, E. (author)
- Linköpings universitet,Linköping University
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- Forsberg, Urban (author)
- Linköpings universitet,Linköping University
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- Rorsman, Niklas, 1964 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- 2016-03-09
- 2016
- English.
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In: Japanese Journal of Applied Physics. - : IOP Publishing. - 1347-4065 .- 0021-4922. ; 55:5
- Related links:
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http://dx.doi.org/10...
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https://doi.org/10.7...
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Abstract
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- AlGaN/GaN high electron mobility transistors (HEMTs) fabricated on a heterostructure grown by metalorganic chemical vapor deposition using an alternative method of carbon (C) doping the buffer are characterized. C-doping is achieved by using propane as precursor, as compared to tuning the growth process parameters to control C-incorporation from the gallium precursor. This approach allows for optimization of the GaN growth conditions without compromising material quality to achieve semi-insulating properties. The HEMTs are evaluated in terms of isolation and dispersion. Good isolation with OFF-state currents of 2 x 10(-6)A/mu m, breakdown fields of 70V/mu m, and low drain induced barrier lowering of 0.13mV/V are found. Dispersive effects are examined using pulsed current-voltage measurements. Current collapse and knee walkout effects limit the maximum output power to 1.3W/mm. With further optimization of the C-doping profile and GaN material quality this method should offer a versatile approach to decrease dispersive effects in GaN HEMTs. (C) 2016 The Japan Society of Applied Physics
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
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- art (subject category)
- ref (subject category)
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- By the author/editor
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Bergsten, Johan, ...
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Li, X.
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Nilsson, Daniel
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Danielsson, O.
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Pedersen, H.
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Janzen, E.
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show more...
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Forsberg, Urban
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Rorsman, Niklas, ...
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show less...
- About the subject
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- ENGINEERING AND TECHNOLOGY
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ENGINEERING AND ...
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and Electrical Engin ...
- Articles in the publication
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Japanese Journal ...
- By the university
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Chalmers University of Technology