Interlayer Exciton Lasing in Atomically Thin Heterostructures

• We present an interlayer exciton laser composed of a MoS2/WSe2 heterostructure integrated with a silicon photonic topological microcavity with a quality factor of up to 104. We achieve excitonic lasing with ultra-low threshold, high side-mode suppression ratio and the longest emission wavelength to the telecommunication O-band.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Telekommunikation (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Telecommunications (hsv//eng)

NATURVETENSKAP  -- Fysik -- Atom- och molekylfysik och optik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Atom and Molecular Physics and Optics (hsv//eng)

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

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