Dynamic properties of silicon-integrated short-wavelength hybrid-cavity VCSEL

Haglund, Emanuel, 1988 (author): Chalmers tekniska högskola,Chalmers University of Technology

Westbergh, Petter, 1981 (author): Chalmers tekniska högskola,Chalmers University of Technology

Gustavsson, Johan, 1974 (author): Chalmers tekniska högskola,Chalmers University of Technology

Larsson, Anders, 1957 (author): Chalmers tekniska högskola,Chalmers University of Technology

(creator_code:org_t)

ISBN 9781510600010
SPIE, 2016
2016
English.
In: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9781510600010 ; 9766

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Abstract Subject headings

We present a vertical-cavity surface-emitting laser (VCSEL) where a GaAs-based “half-VCSEL” is attached to a dielectric distributed Bragg reflector on silicon using ultra-thin divinylsiloxane-bis-benzocyclobutene (DVS-BCB) adhesive bonding, creating a hybrid cavity where the optical field extends over both the GaAs- and the Si-based parts of the cavity. A VCSEL with an oxide aperture diameter of 5 μm and a threshold current of 0.4 mA provides 0.6 mW output power at 845 nm. The VCSEL exhibits a modulation bandwidth of 11 GHz and can transmit data up to 20 Gbps.

By the author/editor: Haglund, Emanuel ...; Kumari, Sulakshn ...; Westbergh, Pette ...; Gustavsson, Joha ...; Roelkens, Gunthe ...; Baets, Roel G.; show more...; Larsson, Anders, ...; show less...

About the subject

ENGINEERING AND TECHNOLOGY: ENGINEERING AND ...; and Electrical Engin ...; and Telecommunicatio ...

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