An AlGaN/GaN HEMT-Based Microstrip MMIC Process for Advanced Transceiver Design

Sudow, Mattias,1980Chalmers tekniska högskola,Chalmers University of Technology (author)

A MMIC process in AlGaN/GaN technology for advanced transceiver design has been developed. The process is based on microstrip technology with a complete model library of passive elements and AlGaN/GaN HEMTs. The transistor technology in this process is suitable for both power and low noise design, demonstrated with a power density of 5 W/mm, and an ${rm NF}_{min}$ of 1.4 dB at $X$ -band. Process stability of subcircuits, complementary to power amplifiers and LNAs, in a transceiver system have been investigated. The results indicate that an all AlGaN/GaN MMIC transceiver is realizable using this technology.

Fagerlind, Martin,1980Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)fagemart (author)
Thorsell, Mattias,1982Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)thorsell (author)
Andersson, Kristoffer,1976Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)e7koffe (author)
Billström, Niklas,1800 (author)
Nilsson, Per-Åke,1964Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)pernilss (author)
Rorsman, Niklas,1964Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)rorsman (author)
Chalmers tekniska högskola (creator_code:org_t)

In:IEEE Transactions on Microwave Theory and Techniques56:8, s. 1827-18330018-94801557-9670

By the author/editor: Sudow, Mattias, ...; Fagerlind, Marti ...; Thorsell, Mattia ...; Andersson, Krist ...; Billström, Nikla ...; Nilsson, Per-Åke ...; show more...; Rorsman, Niklas, ...; show less...

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