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An AlGaN/GaN HEMT-B...
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Sudow, Mattias,1980Chalmers tekniska högskola,Chalmers University of Technology
(author)
An AlGaN/GaN HEMT-Based Microstrip MMIC Process for Advanced Transceiver Design
- Article/chapterEnglish2008
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LIBRIS-ID:oai:research.chalmers.se:8a0308c0-f026-413b-a420-a8fcd5c9cbaa
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https://research.chalmers.se/publication/74026URI
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Language:English
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Summary in:English
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Subject category:art swepub-publicationtype
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Subject category:ref swepub-contenttype
Notes
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A MMIC process in AlGaN/GaN technology for advanced transceiver design has been developed. The process is based on microstrip technology with a complete model library of passive elements and AlGaN/GaN HEMTs. The transistor technology in this process is suitable for both power and low noise design, demonstrated with a power density of 5 W/mm, and an ${rm NF}_{min}$ of 1.4 dB at $X$ -band. Process stability of subcircuits, complementary to power amplifiers and LNAs, in a transceiver system have been investigated. The results indicate that an all AlGaN/GaN MMIC transceiver is realizable using this technology.
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Fagerlind, Martin,1980Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)fagemart
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Thorsell, Mattias,1982Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)thorsell
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Andersson, Kristoffer,1976Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)e7koffe
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Billström, Niklas,1800
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Nilsson, Per-Åke,1964Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)pernilss
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Rorsman, Niklas,1964Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)rorsman
(author)
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Chalmers tekniska högskola
(creator_code:org_t)
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In:IEEE Transactions on Microwave Theory and Techniques56:8, s. 1827-18330018-94801557-9670
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