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A novel technique f...
A novel technique for the extraction of nonlinear model for microwave transistors under dynamic-bias operation
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- Avolio, G. (author)
- Katholieke Universiteit Leuven
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- Raffo, A. (author)
- University of Ferrara
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- Angelov, Iltcho, 1943 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Crupi, G. (author)
- Universita degli Studi di Messina,University of Messina
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- Vannini, G. (author)
- University of Ferrara
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- Schreurs, Dmmp (author)
- Katholieke Universiteit Leuven
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(creator_code:org_t)
- ISBN 9781467361767
- 2013
- 2013
- English.
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In: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781467361767 ; , s. Art. no. 6697394-
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Abstract
Subject headings
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- In this work we describe a novel technique for the extraction of nonlinear model for microwave transistors from nonlinear measurements obtained by simultaneously driving the device under test with low- and high-frequency excitations. Specifically, the large-signal operating point of the device is set by large-signal low-frequency excitations. On top of these a tickle tone at high-frequency is applied. In this way, one can separate the contributions of the IDS current source and the charge sources by a single measurement. The nonlinear model, based on equations available in commercial CAD tools, is extracted for a 0.15 μm GaAs pHEMT. Good agreement is obtained between model predictions and experimental data.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- Microwave FET
- Q-V characteristics
- I-V dynamic characteristics
- Nonlinear transistor model
- Nonlinear measurements
Publication and Content Type
- kon (subject category)
- ref (subject category)
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