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Large-Signal Modelling and Comparison of AlGaN/GaN HEMTs and SiC MESFETs
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- Angelov, Iltcho, 1943 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Andersson, Kristoffer, 1976 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
- Schreuers, D (author)
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- (creator_code:org_t)
- ISBN 9784902339116
- 2006
- 2006
- English.
- In: IEEE Asia PAcific Microwave Conference, 2006, Yokohama, Japan. - 9784902339116 ; , s. 279-282
- Conference paper (peer-reviewed)
Abstract
Subject headings
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- The Large Signal (LS) model for GaN and SiC FET devices was developed and evaluated with DC, S, and LS measurements. Special attention was paid to improve the management of harmonics and provide. a more physical treatment of the dispersion. The model was implemented in a commercial CAD tool and exhibit good overall accuracy.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- FET LS models
Publication and Content Type
- kon (subject category)
- ref (subject category)
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