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Ultra-low contact r...
Ultra-low contact resistance in graphene devices at the Dirac point
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- Anzi, L. (author)
- Politecnico di Milano,Polytechnic University of Milan
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- Mansouri, Aida, 1988 (author)
- Politecnico di Milano,Polytechnic University of Milan
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- Pedrinazzi, P. (author)
- Politecnico di Milano,Polytechnic University of Milan
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- Guerriero, E. (author)
- Politecnico di Milano,Polytechnic University of Milan
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- Fiocco, M. (author)
- Politecnico di Milano,Polytechnic University of Milan
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- Pesquera, A. (author)
- Graphenea SA
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- Centeno, A. (author)
- Graphenea SA
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- Zurutuza, A. (author)
- Graphenea SA
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- Behnam, A. (author)
- University of Illinois
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- Carrion, E. A. (author)
- University of Illinois
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- Pop, E. (author)
- Stanford University
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- Sordan, R. (author)
- Politecnico di Milano,Polytechnic University of Milan
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(creator_code:org_t)
- 2018-02-20
- 2018
- English.
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In: 2D Materials. - : IOP Publishing. - 2053-1583. ; 5:2
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Abstract
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- Contact resistance is one of the main factors limiting performance of short-channel graphene field-effect transistors (GFETs), preventing their use in low-voltage applications. Here we investigated the contact resistance between graphene grown by chemical vapor deposition (CVD) and different metals, and found that etching holes in graphene below the contacts consistently reduced the contact resistance, down to 23 m with Au contacts. This low contact resistance was obtained at the Dirac point of graphene, in contrast to previous studies where the lowest contact resistance was obtained at the highest carrier density in graphene (here 200 m was obtained under such conditions). The 'holey' Au contacts were implemented in GFETs which exhibited an average transconductance of 940 S m−1 at a drain bias of only 0.8 V and gate length of 500 nm, which out-perform GFETs with conventional Au contacts.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Maskinteknik -- Tribologi (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Mechanical Engineering -- Tribology (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Kemiteknik -- Annan kemiteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Chemical Engineering -- Other Chemical Engineering (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Materialteknik -- Annan materialteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Materials Engineering -- Other Materials Engineering (hsv//eng)
Publication and Content Type
- art (subject category)
- ref (subject category)
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- By the author/editor
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Anzi, L.
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Mansouri, Aida, ...
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Pedrinazzi, P.
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Guerriero, E.
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Fiocco, M.
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Pesquera, A.
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show more...
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Centeno, A.
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Zurutuza, A.
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Behnam, A.
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Carrion, E. A.
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Pop, E.
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Sordan, R.
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show less...
- About the subject
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- ENGINEERING AND TECHNOLOGY
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ENGINEERING AND ...
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and Mechanical Engin ...
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and Tribology
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- ENGINEERING AND TECHNOLOGY
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ENGINEERING AND ...
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and Chemical Enginee ...
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and Other Chemical E ...
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- ENGINEERING AND TECHNOLOGY
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ENGINEERING AND ...
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and Materials Engine ...
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and Other Materials ...
- Articles in the publication
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2D Materials
- By the university
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Chalmers University of Technology